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Inductively coupled plasma chemical vapor deposition silicon nitride for passivation of In0.83Ga0.17As photodiodes

โœ Scribed by Shi, Ming; Shao, Xiumei; Tang, Hengjing; Li, Tao; Wang, Yunji; Li, Xue; Gong, Haimei


Book ID
125860707
Publisher
Elsevier Science
Year
2014
Tongue
English
Weight
845 KB
Volume
67
Category
Article
ISSN
1350-4495

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Chemical bonding and composition of sili
โœ M. Matsuoka; S. Isotani; W. Sucasaire; L.S. Zambom; K. Ogata ๐Ÿ“‚ Article ๐Ÿ“… 2010 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 560 KB

Thin silicon nitride films were prepared at 350 ยฐC by inductively coupled plasma chemical vapor deposition on Si(100) substrates under different NH 3 /SiH 4 or N 2 /SiH 4 gas mixture. The chemical composition and bonding structure of the deposited films were investigated as a function of the process