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Induced Defects in GaAs Etched by Low Energy Ions in Electron Beam Excited Plasma (EBEP) System

✍ Scribed by Yu, Jin-Zhong; Masui, Norio; Yuba, Yoshihiko; Hara, Tamio; Hamagaki, Manabu; Aoyagi, Yoshinobu; Gamo, Kenji; Namba, Susumu

Book ID
127298181
Publisher
Institute of Pure and Applied Physics
Year
1989
Tongue
English
Weight
777 KB
Volume
28
Category
Article
ISSN
0021-4922

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Defects in H implanted GaAs studied by i
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✍ J. Keinonen; E. Rauhala; J. RΓ€isΓ€nen; K. Saarinen; P. HautojΓ€rvi; C. Corbel πŸ“‚ Article πŸ“… 1991 πŸ› Elsevier Science 🌐 English βš– 260 KB

Ion-beam and low-energy positron-beam techniques have been used to study damage and implanted ion distributions and their annealing behavior in semi-insulating GaAs after the room temperature implantation of 3 Γ— 10~-1 x 10 ~7 60 keV H' cm -'. The redistribution of the implanted H during annealing wa