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Indium transients in the growth of InGaAs by metal-organic chemical vapor deposition

✍ Scribed by Fernández, G.E.; Bryan, R.P.; York, P.K.; Coleman, J.J.


Book ID
122775227
Publisher
Elsevier Science
Year
1988
Tongue
English
Weight
407 KB
Volume
6
Category
Article
ISSN
0167-577X

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## Abstract We demonstrated the growth of catalyst‐free InN nanostructures including nanorods on (0001) Al~2~O~3~ substrates using metal‐organic chemical vapor deposition. As the growth time increased, growth rate along __c__‐direction increased superlinearly with decreasing __c__‐plane area fracti