𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Indium-tin-oxide thin film deposited by a dual ion beam assisted e-beam evaporation system

✍ Scribed by J.W Bae; J.S Kim; G.Y Yeom

Book ID
114164815
Publisher
Elsevier Science
Year
2001
Tongue
English
Weight
344 KB
Volume
178
Category
Article
ISSN
0168-583X

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

Indium tin oxide thin films prepared by
Indium tin oxide thin films prepared by ion beam assisted deposition technique at different ion beam currents
✍ Meng, Lijian ;Gao, Jinsong ;Teixeira, V. ;dos Santos, M. P. πŸ“‚ Article πŸ“… 2008 πŸ› John Wiley and Sons 🌐 English βš– 664 KB

## Abstract Indium tin oxide (ITO) films have been deposited onto glass substrates at room temperature by ion beam assisted deposition technique (IBAD) at different ion beam currents (80–120 mA). The effect of the ion beam current on films properties has been studied. The films prepared at low ion

Indium oxide thin-film transistor by rea
Indium oxide thin-film transistor by reactive ion beam assisted deposition
✍ Vygranenko, Y. ;Wang, K. ;Vieira, M. ;Nathan, A. πŸ“‚ Article πŸ“… 2008 πŸ› John Wiley and Sons 🌐 English βš– 326 KB

## Abstract This work reports on the fabrication and characterization of indium oxide semiconducting films and their application in thin‐film transistors (TFTs). The films have been deposited at room temperature by oxygen ion beam assisted e‐beam evaporation. The influence of deposition conditions