Tin-doped indium oxide thin film deposited on organic substrate using oxygen ion beam assisted deposition
β Scribed by J.W. Bae; H.J. Kim; J.S. Kim; Y.H. Lee; N.E. Lee; G.Y. Yeom; Y.W. Ko
- Book ID
- 108422776
- Publisher
- Elsevier Science
- Year
- 2000
- Tongue
- English
- Weight
- 161 KB
- Volume
- 131
- Category
- Article
- ISSN
- 0257-8972
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## Abstract Indium tin oxide (ITO) films have been deposited onto glass substrates at room temperature by ion beam assisted deposition technique (IBAD) at different ion beam currents (80β120 mA). The effect of the ion beam current on films properties has been studied. The films prepared at low ion
## Abstract This work reports on the fabrication and characterization of indium oxide semiconducting films and their application in thinβfilm transistors (TFTs). The films have been deposited at room temperature by oxygen ion beam assisted eβbeam evaporation. The influence of deposition conditions
Indium tin oxide (ITO) films were produced by low-energy oxygen ion beam assisted electron-beam evaporation. The dependence of surface morphology, electrical and optical properties on evaporation rate, oxygen ion beam energy and density, as well as substrate temperatures was characterized by atomic