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Indium oxide film formation by O2 cluster ion-assisted deposition

✍ Scribed by Wei Qin; Ronald Philip Howson; Makoto Akizuki; Jiro Matsuo; Gikan Takaoka; Isao Yamada


Book ID
114194422
Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
424 KB
Volume
54
Category
Article
ISSN
0254-0584

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## Abstract This work reports on the fabrication and characterization of indium oxide semiconducting films and their application in thin‐film transistors (TFTs). The films have been deposited at room temperature by oxygen ion beam assisted e‐beam evaporation. The influence of deposition conditions