Abstract
Indium molybdenum oxide thin films were deposited using different radioβfrequency sputtering units on glass substrates at room temperature from an In~2~O~3~ (95βwt.%): Mo (5βwt.%) target. The film thickness ranges between 160 and 275βnm. The chamber volume of Unitβ1 was βΌ2.4 times larger than that of Unitβ2. Apart from the chamber volume, a significant difference between the two units was the sputtering pressure. The films were characterized by their structural, morphological, optical, and electrical properties. A strong reflection from (222) plane was obtained for the βΌ275βnm thick films deposited in Unitβ1. The films deposited with <275βnm thickness and those deposited in Unitβ2 are close to amorphous with a small crystalline fraction. The surface of the films deposited in Unitβ1 is comprised of randomly arranged crystallites, which is restructured with the increasing film thickness to become a well defined βrice fieldβ like structure (275βnm thick). The films deposited in Unitβ2 are comprised of many holes on the surface that is presumably due to back sputtering. The average visible transmittance calculated in the wavelength between 400 and 800βnm ranges from 70 to 82%. The optical band gap is found to vary between 3.80 and 3.86βeV. The lowest bulk resistivity of the films deposited in Unitβ1 was increased from βΌ4.06βΓβ10^β3^ to 4.07βΓβ10^β1^βΞ©βcm when deposited in Unitβ2. The carrier concentration was decreased from 1.31βΓβ10^20^ to 1.03βΓβ10^18^βcm^β3^ but the Hall mobility increased from 11.7 to 15.0βcm^2^β βV^β1^β βs^β1^.