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InAs self-organized quantum dashes grown on GaAs (211)B

✍ Scribed by Guo, S. P.; Ohno, H.; Shen, A.; Matsukura, F.; Ohno, Y.


Book ID
121256251
Publisher
American Institute of Physics
Year
1997
Tongue
English
Weight
561 KB
Volume
70
Category
Article
ISSN
0003-6951

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πŸ“œ SIMILAR VOLUMES


InAs quantum dots and dashes grown on (1
✍ S.P. Guo; A. Shen; Y. Ohno; H. Ohno πŸ“‚ Article πŸ“… 1998 πŸ› Elsevier Science 🌐 English βš– 199 KB

InAs self-organized quantum dots (QDs) and quantum dashes (QDHs) grown on GaAs (100), (211)B and (311)B substrates by molecular beam epitaxy at different growth temperatures (ΒΉ ) have been investigated. QDs were observed after deposition of 2ML (or 4ML ) of InAs on GaAs (100) (or (311)B) at ΒΉ rangin

Β«Self-organizedΒ» InAs/GaAs quantum dots
✍ J. -Y. Marzin; J. -M. Gerard; O. Cabrol; B. Jusserand; B. Sermage πŸ“‚ Article πŸ“… 1995 πŸ› Italian Physical Society 🌐 English βš– 649 KB