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Photoluminescence of self organised InAs/GaAs quantum dots grown on (N11)B surfaces

โœ Scribed by S Sanguinetti; S.C Fortina; E Grilli; M Guzzi; M Henini; L Eaves


Book ID
114155945
Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
56 KB
Volume
43-44
Category
Article
ISSN
0167-9317

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The e ects of desorption and di usion of indium adatoms on the photoluminescence (PL) from InAs self-assembled quantum dots (QDs) are investigated by introducing growth interruptions after QD formation. Large, low-density and small, high-density QDs were grown by molecular beam epitaxy using low (0: