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Recombination emission from InAs quantum dots grown on vicinal GaAs surfaces

✍ Scribed by V. G. Talalaev; B. V. Novikov; S. Yu. Verbin; A. B. Novikov; Dinh Son Thath; I. V. Shchur; G. Gobsch; R. Goldhahn; N. Stein; A. Golombek; G. É. Tsyrlin; V. N. Petrov; V. M. Ustinov; A. E. Zhukov; A. Yu. Egorov

Book ID
110120358
Publisher
Springer
Year
2000
Tongue
English
Weight
119 KB
Volume
34
Category
Article
ISSN
1063-7826

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✍ L. Beji; L. Bouzaïene; B. Ismaïl; L. Sfaxi; H. Maaref; H. Ben Ouada 📂 Article 📅 2005 🏛 Elsevier Science 🌐 English ⚖ 182 KB

In this paper, we present the growth and photoluminescence (PL) results of InAs quantum dots (QDs) on a p-type porous GaAs (001) substrate. It has been shown that critical layer thickness of InAs overgrowth on porous GaAs has been enhanced compared to that deposited on nominal GaAs. Using porous GaA