Electrospinning is used to fabricate Schottky diodes using polyaniline nanofibers and n-doped Si. By varying the fiber diameter, and also by varying the fiber doping level at a fixed diameter, we compare the device performance and examine the role of surface states on barrier height and charge trans
β¦ LIBER β¦
InAs-based p-n homojunction diodes: Doping effects and impact of doping on device parameters
β Scribed by Changhyun Yi; Tong-Ho Kim; April S. Brown
- Book ID
- 107453732
- Publisher
- Springer US
- Year
- 2006
- Tongue
- English
- Weight
- 77 KB
- Volume
- 35
- Category
- Article
- ISSN
- 0361-5235
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
Schottky diodes based on electrospun pol
β
Rut Rivera; Nicholas J. Pinto
π
Article
π
2009
π
Elsevier Science
π
English
β 314 KB
Shallow trench isolation dimensions effe
β
A. Poyai; I. Rittaporn; E. Simoen; C. Claeys; R. Rooyackers
π
Article
π
2004
π
Elsevier Science
π
English
β 130 KB
Annealing effect on conductivity behavio
β
Shu-Yi Tsai; Min-Hsiung Hon; Yang-Ming Lu
π
Article
π
2011
π
Elsevier Science
π
English
β 763 KB
Transparent electronics is an advanced technology concerning the realization of invisible electronic circuits. The p-type doping in ZnO wide band gap semiconductor has been a challenge for research for many years. In this work, Lithium-doped ZnO films were deposited by the RF magnetron sputtering me
Formation and investigation of pβn diode
β
B. Vengalis; J. Devenson; K. Ε liuΕΎienΔ; R. ButkutΔ; M.A. Rosa; V. Lisauskas; M.
π
Article
π
2006
π
Elsevier Science
π
English
β 197 KB
Annealing effects on leakage current and
β
Francesco Moscatelli; A. Scorzoni; A. Poggi; R. Nipoti
π
Article
π
2007
π
Elsevier Science
π
English
β 153 KB
Effects of base doping and width on the
β
E.D. Graham Jr; J.R. Hauser
π
Article
π
1972
π
Elsevier Science
π
English
β 595 KB