Annealing effect on conductivity behavior of Li–doped ZnO thin film and its application as ZnO-based homojunction device
✍ Scribed by Shu-Yi Tsai; Min-Hsiung Hon; Yang-Ming Lu
- Publisher
- Elsevier Science
- Year
- 2011
- Tongue
- English
- Weight
- 763 KB
- Volume
- 326
- Category
- Article
- ISSN
- 0022-0248
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✦ Synopsis
Transparent electronics is an advanced technology concerning the realization of invisible electronic circuits. The p-type doping in ZnO wide band gap semiconductor has been a challenge for research for many years. In this work, Lithium-doped ZnO films were deposited by the RF magnetron sputtering method. The influence of post-annealing temperature on the electrical, structural and optical properties of ZnO:Li films were investigated. The results show that the ZnO:Li films show (0 0 2) preferred orientation and high average transmittance about 85% in the visible region after annealing temperature of about 550 1C. The optimal p-type conduction of ZnO:Li film is achieved at the post-annealing temperature of 450 1C with a resistivity of 0.22 O cm, hole carrier concentration of 2.47 Â 10 18 cm À 3 and mobility of 0.22 cm 2 /V s. Finally, p-n homojunction based on transparent semiconducting oxides is fabricated.