InAlAs/InGaAs/InP sub-micron HEMTs grown by CBE
โ Scribed by G.O. Munns; M.E. Sherwin; T. Brock; G.I. Haddad; Y. Kwon; G.I. Ng; D. Pavlidis
- Publisher
- Elsevier Science
- Year
- 1992
- Tongue
- English
- Weight
- 368 KB
- Volume
- 120
- Category
- Article
- ISSN
- 0022-0248
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High-performance ZnAlAs / ZnGaAs HEMTs with a highly uniform threshold voltage are fabricated using an ZnP-recess-etch stopper. Recess-deplh control is improued, and design vf the device chuructehtics is made easier. An SCFL ring oscillator with a propagation delay time of 6.6 ps / gate is achieved
Molecular beam epitaxial growth of InxGal\_yAs and In,,All\_~As on InP has been carried out by atomic layer epitaxy (ALE) and laser" assisted molecular beam epitaxy (LAMBE). It is shown that these growth techniques have minimized both alloy clustering and interface roughness in the InGaAs/InAIAs sys