✦ LIBER ✦
Interfacial roughnes and alloy scattering in the InGaAs/InAlAs/InP system grown by ALE and LAMBE
✍ Scribed by A. Christou; Z. Hatzopoulos; A. Dimoulas; G. Kiriakidis
- Publisher
- Elsevier Science
- Year
- 1991
- Tongue
- English
- Weight
- 195 KB
- Volume
- 9
- Category
- Article
- ISSN
- 0749-6036
No coin nor oath required. For personal study only.
✦ Synopsis
Molecular beam epitaxial growth of InxGal_yAs and In,,All_~As on InP has been carried out by atomic layer epitaxy (ALE) and laser" assisted molecular beam epitaxy (LAMBE). It is shown that these growth techniques have minimized both alloy clustering and interface roughness in the InGaAs/InAIAs system. Splitting of the PLE spectra indicates a roughness of 2-3 monolayers while transport measurements have placed an upper limit to the roughness at 4 monolayers.