InAlAs/InGaAs metamorphic HEMT with high current density and high breakdown voltage
✍ Scribed by Zaknoune, M.; Bonte, B.; Gaquiere, C.; Cordier, Y.; Druelle, Y.; Theron, D.; Crosnier, Y.
- Book ID
- 115466767
- Publisher
- IEEE
- Year
- 1998
- Tongue
- English
- Weight
- 69 KB
- Volume
- 19
- Category
- Article
- ISSN
- 0741-3106
No coin nor oath required. For personal study only.
📜 SIMILAR VOLUMES
## Abstract This paper reports a high power 60 GHz push–push oscillator fabricated using 0.12 μm GaAs metamorphic high electron‐mobility transistors. By combining high‐power metamorphic high electron mobility transistor (MHEMT) optimized for millimeter‐wave operation and push–push technique, the os
## Abstract This paper discusses the technology of state‐of‐the‐art GaN high electron mobility transistors (GaN‐HEMTs) used for millimeter‐wave amplifiers. A high maximum frequency of oscillation (__f__~max~) device with high breakdown voltage (__BV__~gd~) was focused on to improve the gain and eff