High-fmaxGaN HEMT with high breakdown voltage over 100 V for millimeter-wave applications

✍ Scribed by Makiyama, Kozo ;Ohki, Toshihiro ;Kanamura, Masahito ;Imanishi, Kenji ;Hara, Naoki ;Kikkawa, Toshihide

• Book ID: 105364257
• Publisher: John Wiley and Sons
• Year: 2007
• Tongue: English
• Weight: 166 KB
• Volume: 204
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.200674881

✦ Synopsis

Abstract

This paper discusses the technology of state‐of‐the‐art GaN high electron mobility transistors (GaN‐HEMTs) used for millimeter‐wave amplifiers. A high maximum frequency of oscillation (f~max~) device with high breakdown voltage (BV~gd~) was focused on to improve the gain and efficiency of a millimeter‐wave amplifier. In this study, we demonstrated a high f~max~ of 210 GHz with a BV~gd~ of over 100 V using a novel Y‐shaped Schottky‐gate and GaN‐cap structure, for the first time. The effect of the AlGaN layer and the device dimensions were investigated to obtain a highly reliable millimeter‐wave power amplifier. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)