Improvement of Impact Ionization Effect and Subthreshold Current in InAlAs/InGaAs Metal–Oxide–Semiconductor Metamorphic HEMT With a Liquid-Phase Oxidized InAlAs as Gate Insulator

✍ Scribed by Kuan-Wei Lee; Kai-Lin Lee; Xian-Zheng Lin; Chao-Hsien Tu; Yeong-Her Wang

• Book ID: 114618632
• Publisher: IEEE
• Year: 2007
• Tongue: English
• Weight: 452 KB
• Volume: 54
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/ted.2006.890599