Optimum design and fabrication of InAlAs/InGaAs HEMT's on GaAs with both high breakdown voltage and high maximum frequency of oscillation

✍ Scribed by Higuchi, K.; Matsumoto, H.; Mishima, T.; Nakamura, T.

• Book ID: 114537764
• Publisher: IEEE
• Year: 1999
• Tongue: English
• Weight: 213 KB
• Volume: 46
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/16.772470