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Inactivation of implanted impurities during buried Si3N4 layer formation

✍ Scribed by N.N. Gerasimenko; V.F. Stas; J.W. Corbett

Book ID
113281615
Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
356 KB
Volume
59-60
Category
Article
ISSN
0168-583X

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It was demonstrated that it is possible to prevent the crystallization of buried Si3N 4 layers formed by N Γ· implantation with E--150 keV, β€’ ---5.0 Γ— 1017 N+cm 2 and TA = 1200 Β°C (2 h). To achieve this, preliminary implantation with E = 150 keV and β€’/> 5.0 x 1016 O + cm 2 has to be carried out. Radi