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In situ SiN passivation of AlGaN/GaN HEMTs by molecular beam epitaxy

✍ Scribed by Heying, B.; Smorchkova, I.P.; Coffie, R.; Gambin, V.; Chen, Y.C.; Sutton, W.; Lam, T.; Kahr, M.S.; Sikorski, K.S.; Wojtowicz, M.

Book ID: 118237534
Publisher: The Institution of Electrical Engineers
Year: 2007
Tongue: English
Weight: 60 KB
Volume: 43
Category: Article
ISSN: 0013-5194
DOI: 10.1049/el:20071211

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