Highly uniform AlGaN/GaN HEMT films grown on 200-mm silicon substrates by plasma molecular beam epitaxy

✍ Scribed by Hoke, William E.; Kennedy, Theodore D.; Torabi, Abbas; Lyman, Peter S.; Howsare, C. Alan; Schultz, Brian D.

• Book ID: 127374217
• Publisher: AVS (American Vacuum Society)
• Year: 2014
• Tongue: English
• Weight: 643 KB
• Volume: 32
• Category: Article
• ISSN: 1520-8567
• DOI: 10.1116/1.4873996