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Arrangement of GaN nanowires grown by plasma-assisted molecular beam epitaxy on silicon substrates with amorphous Al2O3 buffers

✍ Scribed by Sobanska, M.; Wierzbicka, A.; Klosek, K.; Borysiuk, J.; Tchutchulashvili, G.; Gieraltowska, S.; Zytkiewicz, Z.R.

Book ID: 121467571
Publisher: Elsevier Science
Year: 2014
Tongue: English
Weight: 523 KB
Volume: 401
Category: Article
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2014.01.007

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