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Comprehensive Study on the Bias-Dependent Equivalent-Circuit Elements Affected by PECVD SiN Passivation in AlGaN/GaN HEMTs

✍ Scribed by Zhi Hong Liu; Geok Ing Ng; Arulkumaran, S.; Ye Kyaw Thu Maung; Khoon Leng Teo; Siew Chuen Foo; Sahmuganathan, V.


Book ID
114620312
Publisher
IEEE
Year
2011
Tongue
English
Weight
849 KB
Volume
58
Category
Article
ISSN
0018-9383

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