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In situ reflectance anisotropy studies of the growth of CdTe and other compounds by MOCVD

✍ Scribed by V. Sallet; R. Druilhe; J.E. Bouree; R. Triboulet; O. Acher; V. Yakovlev; B. Drevillon

Book ID
103954108
Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
408 KB
Volume
16
Category
Article
ISSN
0921-5107

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We demonstrate the use of Reflectance Anisotropy Spectroscopy (RAS) to determine the carrier concentration in GaAs of the topmost layers (%20 nm) in-situ during layer growth. The doping contributes to three features in the RAS spectra: an oscillation at 0 and an offset of the baseline of the whole