𝔖 Bobbio Scriptorium
✦   LIBER   ✦

In situ monitoring and control of InGaP growth on GaAs in MOVPE

✍ Scribed by M. Zorn; T. Trepk; P. Kurpas; M. Weyers; J.-T. Zettler; W. Richter

Book ID
108342831
Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
141 KB
Volume
195
Category
Article
ISSN
0022-0248

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

In Situ Monitoring of GaN Growth in Mult
In Situ Monitoring of GaN Growth in Multiwafer MOVPE Reactors
✍ LΓΌnenbΓΌrger, M. ;Protzmann, H. ;Heuken, M. ;JΓΌrgensen, H. πŸ“‚ Article πŸ“… 1999 πŸ› John Wiley and Sons 🌐 English βš– 191 KB πŸ‘ 2 views

Normal incidence reflectivity measurements were carried out in an AIX 2000G3HT Multiwafer Planetary Reactor 1 MOVPE system, a large scale production tool for GaN-based devices. In situ monitoring was used to investigate nucleation behaviour, temperature dependence of GaN growth, and the deposition o