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Detection of the interlayer at the GaAs-on-InGaP interface in MOVPE InGaP/GaAs by the dark field method

✍ Scribed by C. Frigeri; G. Attolini; M. Bosi; C. Pelosi; F. Germini

Book ID
106398026
Publisher
Springer US
Year
2008
Tongue
English
Weight
327 KB
Volume
19
Category
Article
ISSN
0957-4522

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Effect of electric field on the probabil
Effect of electric field on the probability of optical transitions in InGaAs/GaAs quantum wells observed by photo- and electroreflectance methods
✍ Pikhtin, A. N. ;Komkov, O. S. ;Bugge, F. πŸ“‚ Article πŸ“… 2005 πŸ› John Wiley and Sons 🌐 English βš– 234 KB

## Abstract The influence of an electric field on the energy spectrum and the probability of optical transitions in InGaAs/GaAs single quantum wells (QWs) of different widths has been investigated with photo‐ and electroreflectance techniques. The electric field in the area of a QW is varied in a w