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Effect of the growth sequence on the properties of InGaP/GaAs/InGaP quantum wells grown by LP-MOVPE from group-V metalorganic sources

✍ Scribed by M Begotti; M Longo; R Magnanini; A Parisini; L Tarricone; C Bocchi; F Germini; L Lazzarini; L Nasi; M Geddo


Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
281 KB
Volume
222
Category
Article
ISSN
0169-4332

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