𝔖 Bobbio Scriptorium
✦   LIBER   ✦

In situ measurement of etch velocity of layers on silicon

✍ Scribed by H. Proksche; G. Nagorsen; D. Roß

Book ID
112291125
Publisher
Springer
Year
1991
Tongue
English
Weight
265 KB
Volume
341
Category
Article
ISSN
1618-2650

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

In situ etch treatments of silicon carbi
In situ etch treatments of silicon carbide epitaxial layer for morphological quality improvement of the surfaces
✍ Angelis, S. De ;Perrone, D. ;Scaltrito, L. ;Ferrero, S. ;Pirri, C. F. ;Mauceri, 📂 Article 📅 2006 🏛 John Wiley and Sons 🌐 English ⚖ 135 KB

## Abstract Different homo epitaxial 4H‐SiC commercial wafers were undergone hydrogen etching process that was developed in the reaction chamber of a Hot Wall Chemical Vapor Deposition (HWCVD) reactor. We have studied the effects of physical desorption to point out the morphology and the structural