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In-Situ Surface-Roughness Measurements during the Preparation of Chemically Etched Porous Silicon

✍ Scribed by P.J. Harris; S.C. Bayliss; T. Bardrick; R. Hillman; R. Cubitt

Book ID
110277658
Publisher
Springer
Year
2000
Tongue
English
Weight
93 KB
Volume
7
Category
Article
ISSN
1380-2224

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## Abstract We have carried out interferometric measurements of interface roughness in‐situ during electrochemical etching of p‐type porous silicon (PS) at room temperature. We found that at a certain porosity (∼70%) and with an electrolyte where a low fraction (10%) of the ethanol was replaced wit