𝔖 Bobbio Scriptorium
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In SITU implantation and SIMS analysis of D in Si and NbV using an ion microprobe

✍ Scribed by C.M. Loxton; B. Ladna

Book ID
113277687
Publisher
Elsevier Science
Year
1986
Tongue
English
Weight
349 KB
Volume
15
Category
Article
ISSN
0168-583X

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πŸ“œ SIMILAR VOLUMES

SIMS analyses of ultra-low-energy B ion
SIMS analyses of ultra-low-energy B ion implants in Si: Evaluation of profile shape and dose accuracy
✍ C.W. Magee; R.S. Hockett; T.H. BΓΌyΓΌklimanli; I. Abdelrehim; J.W. Marino πŸ“‚ Article πŸ“… 2007 πŸ› Elsevier Science 🌐 English βš– 235 KB

Numerous experimental studies for near-surface analyses of B in Si have shown that the B distribution within the top few nanometers is distorted by secondary ion mass spectrometry (SIMS) depth profiling with O 2 -flooding or normal incidence O 2 bombardment. Furthermore, the presence of surface oxid