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Improvement of thermal stability and electrical performance in HfSiO gate dielectrics by nitrogen incorporation

✍ Scribed by X.M. Yang; X.M. Wu; L.J. zhuge; T. Yu

Book ID: 113850931
Publisher: Elsevier Science
Year: 2011
Tongue: English
Weight: 728 KB
Volume: 44
Category: Article
ISSN: 1386-9477
DOI: 10.1016/j.physe.2011.08.030

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