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Improvement of Resistive Switching Stability of HfO2 Films with Al Doping by Atomic Layer Deposition

✍ Scribed by Peng, Ching-Shiang; Chang, Wen-Yuan; Lee, Yi-Hsuan; Lin, Ming-Ho; Chen, Frederick; Tsai, Ming-Jinn

Book ID: 121482490
Publisher: The Electrochemical Society
Year: 2012
Tongue: English
Weight: 186 KB
Volume: 15
Category: Article
ISSN: 1099-0062
DOI: 10.1149/2.011204esl

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