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Improved Resistive Switching Properties of Solution-Processed TiO x Film by Incorporating Atomic Layer Deposited TiO 2 layer

✍ Scribed by Kim, Insung; Jung, Seungjae; Shin, Jungho; Biju, Kuyyadi P.; Seo, Kyungah; Siddik, Manzar; Liu, Xinjun; Kong, Jaemin; Lee, Kwanghee; Hwang, Hyunsang


Book ID
126782627
Publisher
Institute of Pure and Applied Physics
Year
2011
Tongue
English
Weight
630 KB
Volume
50
Category
Article
ISSN
0021-4922

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