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Improvement of resist mask plasma etching durability by plasma chemical polymerization

✍ Scribed by V.F. Limanova; D.B. Askerov; A.V. Kovalchuk; V.N. Vasilets


Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
293 KB
Volume
17
Category
Article
ISSN
0167-9317

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The resistance of PECVD SiN films to dry etching is increased by more than three orders of magnitude by exposure to an oxygen plasma. In this paper we describe the oxygen treatment. Both the film thickness and the refractive index are modified by the oxygen treatment suggesting a homogenous densific