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Improvement of photoluminescence and electroluminescence characteristics of MBE-grown In0.53Ga0.47As/In0.53(Ga0.6Al0.4)0.47As quantum well laser structure with InGaAlAs digital alloys by thermal annealing

✍ Scribed by J.S. Yu; J.D. Song; J.M. Kim; S.J. Bae; Y.T. Lee; H. Lim

Publisher: Springer
Year: 2003
Tongue: English
Weight: 260 KB
Volume: 76
Category: Article
ISSN: 1432-0630
DOI: 10.1007/s00339-002-1978-3

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