Modulated cyclotron resonance in multi-quantum well structure of In0.53Ga0.47As/InP induced by interband and exciton excitation
β Scribed by Shen, S. C. ;Lu, W. ;von Ortenberg, M. ;Wetzel, C.
- Publisher
- Springer
- Year
- 1994
- Tongue
- English
- Weight
- 336 KB
- Volume
- 15
- Category
- Article
- ISSN
- 0195-9271
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InGaAs/InP multi-quantum well structures, grown by metal-organic vapour phase-epitaxy, were investigated by Raman spectroscopy and X-ray diffractometry to analyse the influence of precursor gas switching parameters on the interface abruptness. Owing to carry-over effects, InAsP is formed at the InGa
We observed that a series of peaks, which were clearly extracted from a photocurrent difference spectrum, corresponded to interband optical transitions of an In 0.53 Ga 0.47 As/ In 0.52 Al 0.48 As multi-quantum wells structure. The nonparabolic tendency of the electron effective mass was suggested f