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Improvement of InN layers deposited on Si(111) by RF sputtering using a low-growth-rate InN buffer layer

✍ Scribed by S. Valdueza-Felip; J. Ibáñez; E. Monroy; M. González-Herráez; L. Artús; F.B. Naranjo

Book ID
113937517
Publisher
Elsevier Science
Year
2012
Tongue
English
Weight
574 KB
Volume
520
Category
Article
ISSN
0040-6090

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Microstructure of N-face InN grown on Si
Microstructure of N-face InN grown on Si (111) by plasma-assisted MBE using a thin GaN-AlN buffer layer
✍ Dimitrakopulos, G. P. ;Kehagias, Th. ;Ajagunna, A. ;Kioseoglou, J. ;Kerasiotis, 📂 Article 📅 2010 🏛 John Wiley and Sons 🌐 English ⚖ 650 KB

## Abstract The structural properties of 2 µm thick N‐face InN film, grown on Si (111) by plasma source molecular beam epitaxy after the initial deposition of 20 nm AlN and 40 nm GaN, were examined by transmission electron microscopy. The lattice mismatched GaN/AlN and InN/GaN interfaces limited th