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Improvement of cubic silicon carbide crystals grown from solution

✍ Scribed by J. Eid; J.L. Santailler; B. Ferrand; A. Basset; A. Passero; R. Lewandowska; C. Balloud; J. Camassel

Book ID
108268884
Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
279 KB
Volume
40
Category
Article
ISSN
0749-6036

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πŸ“œ SIMILAR VOLUMES

Micro-Raman investigation of cubic silic
Micro-Raman investigation of cubic silicon carbide crystals grown from the travelling zone method
✍ Lewandowska, R. ;Eid, J. ;Camassel, J. ;Santailler, J. L. ;Ferrand, B. πŸ“‚ Article πŸ“… 2007 πŸ› John Wiley and Sons 🌐 English βš– 185 KB

## Abstract Micro‐Raman spectroscopy has been used to investigate two different 3C‐SiC crystals grown from the melt using the travelling‐zone method. The melt was a C‐rich silicon solution held at 1700 Β°C. Two different (relative) positions of the seed and feed (bottom and up, respectively) were in