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Bulk crystal growth of cubic silicon carbide by sublimation epitaxy

✍ Scribed by Tomoaki Furusho; Makoto Sasaki; Satoru Ohshima; Shigehiro Nishino

Book ID
108341798
Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
299 KB
Volume
249
Category
Article
ISSN
0022-0248

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πŸ“œ SIMILAR VOLUMES

Epitaxial growth of silicon carbide laye
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## Abstract Structural defects of α‐SiC epitaxial layers grown by sublimation β€œsandwich‐method” in vacuum at the temperatures ranging from 1600 to 2100 Β°C have been investigated by X‐ray topography and optical microscopy methods. It was shown, that perfect SiC layers with the homogeneous polytype s