𝔖 Bobbio Scriptorium

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Improved method for the oxide thickness extraction in MOS structures with ultrathin gate dielectrics

✍ Scribed by Ghibaudo, G.; Bruyere, S.; Devoivre, T.; DeSalvo, B.; Vincent, E.

Book ID: 118180250
Publisher: IEEE
Year: 2000
Tongue: English
Weight: 187 KB
Volume: 13
Category: Article
ISSN: 0894-6507
DOI: 10.1109/66.843630

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