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Tunnel DCIV extraction of dopant-impurity concentration, oxide thickness, and length in the channel and extension regions of ultrathin gate-oxide MOS transistors

✍ Scribed by Jie, B.B.; Chih-Tang Sah


Book ID
114617854
Publisher
IEEE
Year
2005
Tongue
English
Weight
471 KB
Volume
52
Category
Article
ISSN
0018-9383

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