✦ LIBER ✦

Improved design of the gallium arsenide permeable base transistor

✍ Scribed by Osman, M.A.; Navon, D.H.; Timg-Wei Tang; Lin Sha

Book ID: 114594514
Publisher: IEEE
Year: 1983
Tongue: English
Weight: 630 KB
Volume: 30
Category: Article
ISSN: 0018-9383
DOI: 10.1109/t-ed.1983.21297

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Improved performance design of gallium a

Improved performance design of gallium arsenide solar cells for space

✍ Parekh, R.H.; Barnett, A.M. 📂 Article 📅 1984 🏛 IEEE 🌐 English ⚖ 702 KB

Modelling of heterojunction bipolar tran

Modelling of heterojunction bipolar transistors (HBTs) based on gallium arsenide (GaAs)

✍ R. Schultheis; N. Bovolon; J.-E. Müller; P. Zwicknagl 📂 Article 📅 2000 🏛 John Wiley and Sons 🌐 English ⚖ 341 KB

This work describes an approach for small signal modelling of GaAs-based ( ) ( heterojunction bipolar transistors HBTs for low-voltage r r r r r high-power application i.e., 4 2 ) V s 3 V, J s 3 = 10 A r r r r r cm . The parameter extraction procedure is discussed in ce c detail. Furthermore, it is

Monte Carlo simulation of the GaAs perme

Monte Carlo simulation of the GaAs permeable base transistor

✍ Chang-Gyu Hwang; Navon, D.H.; Ting-Wei Tang 📂 Article 📅 1987 🏛 IEEE 🌐 English ⚖ 648 KB

Two-dimensional finite-element simulatio

Two-dimensional finite-element simulation of a permeable-base transistor

✍ Marty, A.; Clarac, J.; Bailbe, J.P.; Rey, G. 📂 Article 📅 1983 🏛 The Institution of Electrical Engineers ⚖ 390 KB

The effect of hydrogenation on the sink

The effect of hydrogenation on the sink breakdown voltage of transistors based on ion-doped gallium arsenide structures

✍ V. A. Kagadei; E. V. Nefyodtsev; D. I. Proskurovsky; S. V. Romanenko; L. S. Shir 📂 Article 📅 2003 🏛 SP MAIK Nauka/Interperiodica 🌐 English ⚖ 48 KB

Effect of doping profile variations on t

Effect of doping profile variations on the performance of the permeable base transistor

✍ Gopinath, A.; Rankin, J.B. 📂 Article 📅 1986 🏛 IEEE 🌐 English ⚖ 598 KB