✦ LIBER ✦

Monte Carlo simulation of the GaAs permeable base transistor

✍ Scribed by Chang-Gyu Hwang; Navon, D.H.; Ting-Wei Tang

Book ID: 114595869
Publisher: IEEE
Year: 1987
Tongue: English
Weight: 648 KB
Volume: 34
Category: Article
ISSN: 0018-9383
DOI: 10.1109/t-ed.1987.22901

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Monte Carlo simulation of bipolar transi

Monte Carlo simulation of bipolar transistors

✍ Young-June Park; Navon, D.H.; Ting-Wei Tang 📂 Article 📅 1984 🏛 IEEE 🌐 English ⚖ 763 KB

Current prospects for the permeable base

Current prospects for the permeable base transistor

✍ CarlO. Bozler 📂 Article 📅 1986 🏛 Elsevier Science ⚖ 49 KB

Computer simulation of a dual gate GaAs

Computer simulation of a dual gate GaAs field-effect transistor using the Monte Carlo method

✍ Moglestue, C. 📂 Article 📅 1979 🏛 Institution of Electrical Engineers ⚖ 357 KB

Monte Carlo simulation of GaAs Schottky

Monte Carlo simulation of GaAs Schottky barrier behaviour

✍ Maziar, C.M.; Lundstrom, M.S. 📂 Article 📅 1987 🏛 The Institution of Electrical Engineers 🌐 English ⚖ 306 KB

Two-dimensional finite-element simulatio

Two-dimensional finite-element simulation of a permeable-base transistor

✍ Marty, A.; Clarac, J.; Bailbe, J.P.; Rey, G. 📂 Article 📅 1983 🏛 The Institution of Electrical Engineers ⚖ 390 KB

Monte Carlo simulation of the hall effec

Monte Carlo simulation of the hall effect in degenerate GaAs

✍ C.K. Williams; M.A. Littlejohn; T.H. Glisson; J.R. Hauser 📂 Article 📅 1986 🏛 Elsevier Science 🌐 English ⚖ 420 KB

This paper describes a simulation of the Hall effect in GaAs using a slagle particle Monte Carlo method. The Paull exclusion principle and Fermi-Dlrac statistics are included in the simulation so that the calculations are extended to the case of transport in degenerate materials with electron concen