Monte Carlo simulation of the hall effect in degenerate GaAs

✍ Scribed by C.K. Williams; M.A. Littlejohn; T.H. Glisson; J.R. Hauser

• Publisher: Elsevier Science
• Year: 1986
• Tongue: English
• Weight: 420 KB
• Volume: 2
• Category: Article
• ISSN: 0749-6036
• DOI: 10.1016/0749-6036(86)90020-0

✦ Synopsis

This paper describes a simulation of the Hall effect in GaAs using a slagle particle Monte Carlo method. The Paull exclusion principle and Fermi-Dlrac statistics are included in the simulation so that the calculations are extended to the case of transport in degenerate materials with electron concentrations up to 1019 cm -3. Hall mobility and drift mobility for electrons in the low-field ohmic transport regime are calculated from the Monte Carlos results and compared with available typical experimental ~ata.

These results demonstrate the importance of including elecron~lectrou interactions in Monte Carlo simulations for GaAs with carrier concentratlons above 1017 cm -3. They also suggest the need for an evaluation of current models for ionized impurity scattering applied to degenerate materials and an examinatlon of the role of energy hand structure details in Monte Carlos 81,mlatlons In degenerate materials.