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The effect of hydrogenation on the sink breakdown voltage of transistors based on ion-doped gallium arsenide structures

✍ Scribed by V. A. Kagadei; E. V. Nefyodtsev; D. I. Proskurovsky; S. V. Romanenko; L. S. Shirokova


Book ID
110133556
Publisher
SP MAIK Nauka/Interperiodica
Year
2003
Tongue
English
Weight
48 KB
Volume
29
Category
Article
ISSN
1063-7850

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