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Implantation induced damage in IIIV-heterostructures

✍ Scribed by A. Kieslich; H. Doleschel; J.P. Reithmaier; A. Forchel; N.G. Stoffel


Book ID
113286510
Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
415 KB
Volume
99
Category
Article
ISSN
0168-583X

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The electronic characteristics of narrow-gap III-V semiconductor InSb make this material play an important role in infrared detectors. In this material, p-n junctions are currently achieved by light Be-ion implantation to reduce the implantation-induced damage. But the hazardous character of berylli