Be- and Mg-ion implantation-induced damage in InSb

✍ Scribed by A. Declémy; T. Sauvage; E. Kotai; P. Lévêque; M.I. Abd El-Ati

• Publisher: Elsevier Science
• Year: 2001
• Tongue: English
• Weight: 119 KB
• Volume: 4
• Category: Article
• ISSN: 1369-8001
• DOI: 10.1016/s1369-8001(00)00121-9

✦ Synopsis

The electronic characteristics of narrow-gap III-V semiconductor InSb make this material play an important role in infrared detectors. In this material, p-n junctions are currently achieved by light Be-ion implantation to reduce the implantation-induced damage. But the hazardous character of beryllium might lead to strong limitation of its industrial use in future. Mg-ion could then be an attractive substitute. In this paper, a comparison between different Beand Mg-ion implanted bulk InSb samples is made by means of X-ray diffraction, IR-reflectivity and RBSchannelling.