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Mg+ and Be+ ion implantation into AlxGa1−xAs

✍ Scribed by Masaki Yokota; Shigeo Ashigaki; Yunosuke Makita; Toshihiko Kanayama; Hisao Tanoue; Ichiro Takayasu

Publisher
Elsevier Science
Year
1983
Weight
559 KB
Volume
209-210
Category
Article
ISSN
0167-5087

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✍ A. Declémy; T. Sauvage; E. Kotai; P. Lévêque; M.I. Abd El-Ati 📂 Article 📅 2001 🏛 Elsevier Science 🌐 English ⚖ 119 KB

The electronic characteristics of narrow-gap III-V semiconductor InSb make this material play an important role in infrared detectors. In this material, p-n junctions are currently achieved by light Be-ion implantation to reduce the implantation-induced damage. But the hazardous character of berylli