Suppression of rare-earth implantation-induced damage in GaN
β Scribed by A Vantomme; S.M Hogg; M.F Wu; B Pipeleers; M Swart; S Goodman; D Auret; K Iakoubovskii; G.J Adriaenssens; K Jacobs; I Moerman
- Book ID
- 114164483
- Publisher
- Elsevier Science
- Year
- 2001
- Tongue
- English
- Weight
- 153 KB
- Volume
- 175-177
- Category
- Article
- ISSN
- 0168-583X
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## Abstract The medium range implantation of rare earth ions at room temperature in GaN layers leads to the formation of point defect clusters, basal and prismatic stacking faults from the lowest fluence. When a threshold fluence of about 3 Γ 10^15^ at/cm^2^ is reached, a highly disordered βnanocry
## Abstract The structural evolution of 10 nm AlN caps grown on GaN layers has been investigated by transmission electron microscopy (TEM) and scanning electron microscopy (SEM) after growth, and implantation by rare earths ions and annealing at high temperature. The AlN cap relaxation is shown to