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Behaviour of the AlN cap during GaN implantation of rare earths and annealing

✍ Scribed by Gloux, Florence ;Wójtowicz, Tomasz ;Ruterana, Pierre ;Lorenz, K. ;Alves, E.

Book ID
105363680
Publisher
John Wiley and Sons
Year
2006
Tongue
English
Weight
345 KB
Volume
203
Category
Article
ISSN
0031-8965

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✦ Synopsis

Abstract

The structural evolution of 10 nm AlN caps grown on GaN layers has been investigated by transmission electron microscopy (TEM) and scanning electron microscopy (SEM) after growth, and implantation by rare earths ions and annealing at high temperature. The AlN cap relaxation is shown to take place by pinholes formation. During annealing at 1300 °C, pinhole‐free areas of the AlN cap protect the GaN layer and allow efficient optical activation of the rare earths dopants. Through pinholes, an explosive dissociation of the GaN layer occurs. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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## Abstract The medium range implantation of rare earth ions at room temperature in GaN layers leads to the formation of point defect clusters, basal and prismatic stacking faults from the lowest fluence. When a threshold fluence of about 3 × 10^15^ at/cm^2^ is reached, a highly disordered ‘nanocry